ABSTRACT
Al-doped ZnO (ZnO:Al) films used as ohmic contacts for thin-film solar cells were obtained by magnetron sputtering at room temperature on glass substrates. The effect of
humidity and thermal treatment in air on electrical and optical properties of ZnO:Al films was studied. It was determined that when the temperature is increased from 2500C
to 3000C, the electrical resistance of the films increases by two orders of magnitude.
Keywords: solar cells, ZnO:Al, magnetron sputtering, thin films.
DOI:10.70784/azip.3.2024C09
Received: 2024
Internet publishing: 2024
AUTHORS & AFFILIATIONS
1. Institute of Physics Ministry of Science and Education Republic of Azerbaijan, 131 H.Javid ave, Baku, AZ 1073, Azerbaijan
2. Institute of Radiation Problems, Ministry of Science and Education of the Republic of Azerbaijan 9 B. Vahabzade, Baku, AZ 1143, Azerbaijan
E-mail: ch.sabzaliyeva@mail.ru
Graphics and Images
Fig.1-2-3
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[1] J. Hedstrom, H. Ohlsen, M. Bodegart, Kylner, L. Stolt, D. Hariskos, M. Ruckh, H.W. Sckock. Proc 23rd PSE IEEE Photovolt. Spes. Conf. (IEEE, New York, 1993, p. 364.
[2] N.N. Abdulzadə, S.T. Ağaliyeva, K.Ə. Əsgərova, D.A. Əhmədova, Ç.E. Səbzəliyeva, A.K. Zamanova, N.N. Mursakulov. Maqnit sistemləri sürüşdürülmüş iki maqnetrondan tozlandırılma üsulu ilə nazik təbəqəli günəş elementləri üçün CuIn1-xGaxSe2 təbəqələrinin alınması və tədqiqi, AJP FİZİKA, section:Az,2018, v. XXIV, p.13-17.
[3] F.H. Karg. Sol. Energy Mater. Sol. Cells 66, 2001, 645.
[4] E.P. Zaretskaya, I.A. Victorov, O.V. Goncharova, T.R. Leonova, M. Gartner, N.N. Mursakulov, N.N. Abdulzade, Ch.E. Sabzaliyeva. Deposition of Al-doped ZnO films by DC maqnetron sputtering: efects of damp exposure and annealing on their properties. AJP. 2012, v. XVII, № 4, p. 26-27.
[5] E.P. Zaretskaya, V.F. Gremenok, A.P. Odrinsky, N.N. Abdulzade, N.N. Mursakulov, Ch.E. Sabzaliyeva. Structure and electrical activity of structure defects of Cu(InxGa1-x)(S1-ySey)2 thin films. Azerbaijan Journal of Physics. 2012, v. XVIII, p. 20-22.
[6] N.N. Abdulzadə, V.M. Andreev, D.A. Əhmədova, N.N. Mursakulov, Ç.E. Səbzəliyeva, M. Yakuşev. CIGSS əsaslı konsentratorlu günəş çeviriciləri. AJP. 2018, v.XXIV, № 3, s. 165-166.
[7] Niyazi N. Mursakulov, Nigar N. Abdulzade, Sakin H. Jabarov, Chinara E. Sabzalieva. Investigation of CuIn1-xGaxSe2 thin films for solar cells obtained by the magnetron sputtering method from two magnetrons shifted to each other. New Materials, Compounds and Applications. 2022, vol.6, № 2, p 1-3.
[8] B. Oh et al. Jpn. J. Appl. Phys. 44, 4776, 2005.
[9] R. Menner, R. Schaffler, B. Sprecher and B. Dimmerler. Proc. of the 2-nd Intern. Conf. on Photovoltaic Solar Energy Conversion, Vienna, Austria, 1998, p. 660.
[10] M.K. Jayaraj, A. Antony and M. Ramachandran. Bull. Mater. Sci. 25, 227 (2002).
[11] Igalson, M. Wimbor and J. Wennerberg. Thin Solid Films 403-404, 320, 2002.
[12] O.V. Goncharova, F.V. Karpushko and G.V. Sinitsyn, Technical Physics 28, 1142, 1982.
[13] P. Voitovich, O.V. Goncharova and V.S. Kalinov. J.Appl. Spectrosc. 72, 301 (2005).
[14] W.E.Dewaney, W.S.Chen, J.M.Stewart, R.A.Mickelsen. IEEE Transicions on Electron Devices. 1990, v. 37, № 2, p 428-430.
[15] K.Kim et al.. Jpn. Appl. Phys. 44,4776, 2005.
[16] T.Minami, H.Nanto and S. Takata. Jpn. J. Appl. Phys. 24, L605, 1985.
[17] L-S. Hsu et al., J. Optoelectr. Adv. Mater. 7, 3039, 2005.
[18] Niyazi N. Mursakulov, Nigar N. Abdulzade, Sakin H. Jabarov, Chinara E. Sabzalieva. Investigation of CuIn1-xGaxSe2 thin films for solar cells obtained by the magnetron sputtering method from two magnetrons shifted to each other. New Materials, Compounds and Applications. 2022, vol.6, № 2, p 1-3.
[19] B.Oh et al.. Jpn. J. Appl. Phys. 44, 4776, 2005.
[20] R. Menner, R. Schaffler, B. Sprecher and B. Dimmerler. Proc. of the 2-nd Itern. Conf. on Photovoltaic Solar Energy Conversion, Vienna, Austria,1998,p.660.
[21] M.K. Jayaraj, A. Antony and M. Ramachandran. Bull. Mater. Sci. 25, 227 (2002).
[22] Igalson, M. Wimbor, and J. Wennerberg. Thin Solid Films 403-404, 320, 2002.
[23] O.V. Goncharova, F.V. Karpushko and G. V. Sinitsyn. Technical Physics 28, 1142, 1982.
[24] P. Voitovich, O.V. Goncharova and V.S. Kalinov. J.Appl. Spectrosc. 72, 301, (2005).
[25] W.E. Dewaney, W.S. Chen, J.M. Stewart, R.A. Mickelsen. IEEE Transicions on Electron Devices. 1990, V. 37, № 2, p 428-430.
[26] K. Kim et al. Jpn. Appl. Phys. 44,4776, 2005.
[27] T. Minami, H. Nanto, and S. Takata. Jpn. J. Appl. Phys. 24, L605, 1985.
[28] L-S. Hsu et al., J. Optoelectr. Adv. Mater. 7, 3039, 2005.
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