ABSTRACT
The dielectric properties of the prepared single-crystal samples of solid solutions (TlGaSe2)1-x(TlGaS2)x were studied in
alternating electric fields with a frequency of f = 5 × 104–3.5 × 107 Hz. The relaxation character of the complex permittivity, the nature of dielectric losses,
and the hopping mechanism of charge transfer in the (TlGaSe2)1-x(TlGaS2)x samples were established. It was shown that in
(TlGaSe2)1-x(TlGaS2)x, with increasing x, the conductivity, average distance, and hopping time of charge carriers over the
forbidden band decrease, while the energy spread of states localized near the Fermi level and their concentration increase.
Keywords: transport phenomena, (TlGaSe2)1-x(TlGaS2)x solid solutions, alternating electric fields, frequency, complex permittivity, dielectric losses, charge transfer, localized states.
DOI:10.70784/azip.3.2024CE40
Received: 2024
Internet publishing: 2024
AUTHORS & AFFILIATIONS
1. Institute of Physics, Ministry of Science and Education of Azerbaijan, Baku, AZ-1073 Azerbaijan
2. Sientific Research Institute Geotechnological Problems of Oil, Gas and Chemistry, Azerbaijan State Oil and Industry University, Baku, AZ-1010 Azerbaijan
3. Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku, Az-1143 Azerbaijan
E-mail: solmust@gmail.com
Graphics and Images
Fig.1-2-3
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[1] S.N. Mustafaeva. The interlayer energy barrier in the anisotropic TlBIIIC monocrystals. Fizika. 2005. V. 11. № 1-2. P. 36–37.
[2] A.U. Sheleg, K.V. Iodkovskaya, N.F. Kurilovich. Effect of γ irradiation on the low-temperature electrical conductivity and dielectric properties of TlGaSe2 crystals. Phys. Solid State. 1998. V. 40. № 7. P. 1208–1210. https://doi.org/10.1134/1.1130522.
[3] O.B. Plyushch, A.U. Sheleg. Polytypism and phase transitions in TlInS2 and TlGaSe crystals. Crystallogr. Rep. 1999. V. 44. № 5 P. 813–817.
[4] S.N. Mustafaeva. Frequency dispersion of dielectric coefficients of layered TlGaS2 single crystals. Phys. Solid State. 2004. V. 46. № 6. P. 1008–1010. https://doi.org/10.1134/1.1767234.
[5] A.U. Sheleg, V.G. Gurtovoi, V.V. Shevtsova, S.N. Mustafaeva, E.M. Kerimova. Effect of ionizing radiation on the dielectric characteristics of TlInS2 and TlGaS2 single crystals. Phys. Solid State. 2012. V. 54. № 9. P. 1870–1874. https://doi.org/10.1134/s1063783412090284.
[6] N.M. Gasanly. Compositional dependence of refractive index and oscillator parameters in TlGa(SxSe1-x)2 layered mixed crystals (0 ≤ x ≤ 1) Mat. Chem. Phys. 2012. V. 136. № 1. P. 259–263. https://doi.org/10.1016/j.matchemphys.2012.06.064.
[7] M. Isik, N.M. Gasanly. Ellipsometry study of interband transitions in TlGaS2xSe2-x mixed crystals (0 ≤ x ≤ 1). Optics Commun. 2012. V. 285. № 20. P. 4092–4096. https://doi.org/10.1016/j.optcom.2012.06.029.
[8] M.M. El-Nahass, M.M. Sallam, S.A. Rahman, E.M. Ibrahim. Optical, electrical conduction and dielectric properties of TlGaSe2 layered single crystal. Solid State Sciences. 2006. V. 8. № 5. P. 488–499. https://doi.org/10.1016/j.solidstatesciences.2005.10.020.
[9] H-J. Song, S.-H. Yun, W.-T. Kim. Photoluminescence properties of TlGaS2 and TlGaS2:Er3+ single crystals. J. Phys. Chem. Solids. 1995. V. 56. № 6. P. 787–790. https://doi.org/10.1016/0022-3697(94)00265-7.
[10] N.M. Gasanly. Coexistence of indirect and direct optical transitions, refractive indices, and oscillator parameters in TlGaS2, TlGaSe2, and TlInS2 layered single crystals. J. Korean Phys. Soc. 2010. V. 57. № 1. P. 164-168. https://doi.org/10.3938/JKPS.57.164.
[11] N.F. Mott, E.A. Davi.s Electronic Processes in Non-Crystalline Materials. OUP Oxford, 2012. 590 p. ISBN: 9780199645336.
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