DIELECTRIC AND TRANSPORT PROPERTIES OF (TlInS2)1-x (TlGaSe2)x IN ALTERNATING ELECTRIC FIELDS
S.N. Mustafaeva1, S.M. Asadov2,3, M.M. Godjaev4
2024   C   en   p.43-45

ABSTRACT

The nature of dielectric losses (conductivity losses) and the hopping mechanism of charge carrier transfer in the (TlInS2)1-x (TlGaSe2)x solid solutions (х = 0.1, 0.2, 0.4) in alternate electric fields (f = 5 × 104–3.5 × 107 Hz) were established. The parameters of localized states in the forbidden band of the samples were determined. It was found that the values of the real and imaginary parts of complex dielectric permittivity, dielectric losses tangent and conductivity of studied samples increased with increasing molar fraction (х) of TlGaSe2.

Keywords: transport properties, (TlInS2)1-x (TlGaSe2)x solid solutions, alternating electric fields, frequency, complex permittivity, dielectric losses, charge transfer, localized states.
DOI:10.70784/azip.3.2024CE43

Received: 2024
Internet publishing: 2024

AUTHORS & AFFILIATIONS

1. Institute of Physics, Ministry of Science and Education of Azerbaijan, Baku, AZ-1073 Azerbaijan
2. Sientific Research Institute Geotechnological Problems of Oil, Gas and Chemistry, Azerbaijan State Oil and Industry University, Baku, AZ-1010 Azerbaijan
3. Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku, Az-1143 Azerbaijan
4. Sumgayit State University of the Ministry of Science and Education of Azerbaijan
E-mail: solmust@gmail.com

Graphics and Images

         

       Fig.1-2-3

 [1]   A.U. Sheleg, V.V. Shautsova, V.G. Hurtavy, S.N. Mustafaeva. Low-temperature X-ray diffraction studies of TlInS2, TlGaS2 and TlGaSe2 single crystals. J. Surf. Invest.: X-Ray, Synchrotron and Neutron Techniques. 2013. № 11.P.39-42. https://doi.org/10.1134/s1027451013060190.
[2]   S.N. Mustafaeva, M.M. Asadov, Ismailov A.A. Effect of γ-irradiation on the dielectric properties and ac-conductivity of a TlInS2 single crystal. Phys. Solid State. 2009. Vol. 51. № 11. P. 2140-2143.
[3]   S.N. Mustafayeva, M.M. Asadov, A.A. Ismailov. Radiation effects in TlGaSe2 single crystals. Applied Physics. 2012. № 3. P. 19-23.
[4]   A.U. Sheleg, K.V. Iodkovskaya, N.F. Kurilovich. Effect of γ-irradiation on the electrical conductivity and dielectric properties of TlGaSe2 crystals at low temperatures // Phys. Solid State. 1998. Vol. 40. № 7. P. 1328-1331.
[5]   V.V. Pasynkov, V.S. Sorokin. Materials of electronic engineering. 6th ed., reprinted - St. Petersburg; Moscow; Krasnodar: Lan, 2004. 368 p. (In Russian)
[6]   N.F. Mott, E.A. Davis. Electronic Processes in Non-Crystalline Materials. OUP Oxford, 2012. 590 p. ISBN: 9780199645336.
[7]   M. Pollak. Frequency dependence of conductivity in amorphous solids. Phil. Mag. 1971. Vol. 23. P. 519-542.