ABSTRACT
As a result of the synthesis and growth of TlGaS2 crystals doped with transition metal Ni, quality single crystals were obtained. The optical absorption edge
of single crystals in the temperature range of 77-300 K was studied and the dependence of the forbidden zone width on temperature was determined.
Keywords: chalcogenide, transition metal, nickel, optical absorption edge, band gap width.
DOI:10.70784/azip.3.2024C50
Received: 2024
Internet publishing: 2024
AUTHORS & AFFILIATIONS
Institute of Physics named after H.M.Abdullayev of the Ministry of Science and Education Republic of Azerbaijan, 131 H.Javid ave. Baku, AZ-1073
E-mail: p.ismayilova@physics.science.az
Graphics and Images
Fig.1-2-3
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