FORMATION OF TlGaSe2 AMORPHOUS FILMS UNDER THE EFFECT OF Ge ATOMS
E.Sh. Alekperov, G.B. Ibragimov, A.M. Nazarov, A.M. Narimanzade
2024   C   en   p.50-52

ABSTRACT

There has been investigated TlGa1-xGexSe2 (x=0.02:0.08) compound amorphous films of 35 pm in thickness by high–energy electron diffraction method (HEED). It is established that by interacting with triple compound atoms with Ge interstitial ones as an impurity the distance between atoms in films increases from 3% up to 7%. According to the mentioned increase the distance between atoms, there has been observed of coordinate maximum areas and also with the temperature range of amorphous film formation. In this case it is possible to control precisely amorphous thin film parameters.

Keywords: semiconductor, electron diffraction analysis, doping, structure, amorphous film.
DOI:10.70784/azip.3.2024CE50

Received: 2024
Internet publishing: 2024

AUTHORS & AFFILIATIONS

1. Baku State University, Baku, Azerbaijan, alekperoveldar@mail.ru
2. Institute of Physics named after G.M.Abdullayev. Baku, Azerbaijan
E-mail: alekperoveldar@mail.ru

Graphics and Images

         

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