2020   01   en   p.34-39 A.S. Alekperov, A.E. Nabiyev, T.M. Aydinova,
Influence of Nd impurity atoms and gamma irradiation on roentgenographic spectrum of GeS layered single crystal
 pdf 

ABSTRACT

The roentgenograms of layered single crystals GeS and Ge0.995Nd0.005S before and after gamma irradiation are investigated. It is revealed that at identical conditions after gamma irradiation by dose 30 krad, the reflex intensity of GaS single crystal roentgenogram increases in 2,25 times and for Ge0.995Nd0.005S single crystal this value achieves up to 35. It is supposed that neodymium atoms form the complex aggregates in compositions of which the oxygen atoms consist in. The crystal temperature increases under the influences of quantum small doses and complexes are destroyed. As a result, the oxygen atoms leave the crystal, neodymium crystals take the cation vacancies migrating in crystal and this leads to crystal structure ordering.

Keywords: rare-earth elements, self-compensation irradiation, annigilation, associate, complexing.
PACS: 72.40.+W,76.30Kg,78.20,79.60.-i

Received: 16.03.2020

AUTHORS & AFFILIATIONS

Azerbaijan State Pedagogical University 68, U. Hajibeyov str., Baku, Azerbaijan, 1000
E-mail: aydin60@inbox.ru
REFERENCIES

[1]   Z.A. Jahangirli. Semiconductors, № 52, 436, 2010.
[2]   D.I. Bletskan, V.I. Taran and M.U.Sichka. Ukrainian Journal of Physics, № 9,1436, 1976.
[3]   D.I. Bletskan, I.F. Kopinets, P.P. Pogoretsky, et al., Crystallography, № 5, 1008, 1975.
[4]   D.I. Bletskan, V.N. Kabatsiy, M.M. Bletskan, Up-to-date Information Electronic Technology, Оdessa, 228, 2015.
[5]   Chun Li, H. Liang, P. Gayatni, Yifei Yu, Linyou Cao, ACS Nano.V. 6, p. 8868, 2012.
[6]   Yong J.Ch., S.I. Hyung, M. Yoon, H.K. Chang, S.K. Han, H.B. Seung, R.L. Young, S.J. Chan, M.J. Dong, P. Jeung, Eun H. Ch., S.S. Min, Won J.Ch. Chemical Communications, V. 49. P. 4661, 2013.
[7]   K.U. Rajesh, L. Yi-Ying, K. Chia-Yung, R.T.Srinivasa, S. Raman, M.B. Karunakara, A.Ankur. Nanoscale. V. 8. p. 2284, 2016.
[8]   V.F. Masterov. Semiconductors. № 9, 1435 1993.
[9]   K. Taylor, M. Darby. London, Chapman and Hall LTD, p. 378, 1972.
[10]  M. Тompson, D. Uolsh. Spectrometric Analysis Guide. М.: Nedra, p. 288, 1988 [in Russian].
[11]  V.S. Vavilov, N.A. Uchin. Radiation Effects in Semiconductors, L.: Nauka, p. 234, 1972 [in Russian].
[12]  I.I. Stroykov. Science Technical News of Information Technology, Mechanics and Optics. V. 16, p. 60-67, 2016.
[13]  A.Z. Abasova, R.S. Madatov, V. I. Stafeyev. Radiation- Stimulated ordering in Chalcogenides.: B, Elm, p. 352, 2010 [in Russian].
[14]  A.S. Alekperov. Journal of Advances in Physics. V. 10. p. 2795, 2015.
[15]  R.S. Madatov, A.S. Alekperov, Dzh.A. Maqerramova. Crystallography Reports, № 60, 921, 2015.
[16]  I.P. Chernov, A.P. Mamontov. News of Tomsk Polytechnic University, p. 74-80, 2009
[17]  V.F. Masterov and L.F. Zakharenkov. Semiconductors. № 4, 610, 1990.
[18]  Y.V. Astrova, V.V. Yemtsov, A.A. Lebedev, D.I. Poloskin, A.D. Remenyuk, Yu.V. Rud and V.Y. Khartsiyev. Semiconductors, № 29, 1301, 1995.
[19]  V.T. Mack. Technical Physics Letters, № 12, 17, 1989.
[20]  V.T. Mack. Technical Physics, № 63, 173, 1993.
[21]  A.S. Belous, V.A. Soloducha, S.V. Shevedov. High Speed Electronic Devices, М.: Technosphere, p. 872, 2017 [in Russian].
[22]  K. Cenzual, L. Louise, M. Gelato, M. Penzo, E. Parthe. Acta Crystallography, V.47, p. 433, 1991.
[23]  A.P. Mamontov, I.P. Chernov. Effect of Small Doses of Ionizing Radiation, Томsk.: Deltaplan, p. 288, 2009 [in Russian].
[24]  I.P. Chernov, A.P. Mamontov, A.A. Botaki. Atomic Energy, V. 57, p. 56-58, 1984.
[25]  I.P.Chernov, A.P.Mamontov, P.A. Chervantsev. Physics, V. 12, p. 58-66, 1994.
[26]  D.W. Zhang, F.T. Jin, J.M. Yuan. Chin. Phys. Lett., V. 2, p. 1876, 2006.