2021   01   en   p.12-15 B.D. Urmanov1, M.S. Leonenya1, P.G. Yablonski1, O.B. Tagiyev2,3, F.A. Kazimova2,
T.Sh. Ibrahimova2,
Photoluminescence of Ca4Ga2S7:Eu2+ compound


The photoluminescence (PhL) properties of chalcogenide Ca4Ga2S7:Eu2+ semiconductors in interval of impulse laser excitation from 10 up to 105 Vt/cm2 at room temperature are studied. PhL of Ca4Ga2S7:Eu2+ compound at excitation by radiation in range 450-575nm is characterized by essential dominance of the band in the spectrum on 660 nm. PhL of Ca4Ga2S7:Eu2+ compound on wave lengths 560 nm and 660nm damps at constant times 258 nsec and 326 nsec correspondingly.

Keywords: chalcogenide semiconductors, high excitation level, luminescence efficiency.
PACS: 76.30, 78.55

Received: 07.12.2020


1. Institute of Physics of Belarusian NAS, AZ1143, Minsk, Belarus
2. Institute of Physics of ANAS, AZ1143, H. Javid ave., 131, Baku, Azerbaijan
3. Branch of MSU named after M.V. Lomonosov, Baku, Azerbaijan
E-mail: oktay58@mail.ru

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