2021   01   az   p.21-24 E.A. Kerimov,
Radiation effects in IrSi-Si chips		  pdf 

ABSTRACT

It is established that the critical value of the selected charge in the sensitive elements of the microcircuits increases with an increase in the reverse voltage and with a decrease in the concentration of impurities on the substrate elements of integrated circuits. In the epitaxial layer, these effects are associated with the appearance of local regions with an exceptionally high density of electron-hole pairs in individual elements of the circuit.

Keywords: cosmic radiation, integrated microcircuits, ionization losses, braking path, core, local regions.
UOT: 621.383.5
PACS: 73.40.Ns, 73.40.Sx

DOI:-

Received: 03.02.2021

AUTHORS & AFFILIATIONS

Azerbaijan State Oil and Industry University, 16/21 Azadlig ave. Baku, AZ 1010, Azərbaycan
E-mail: E_Kerimov.fizik@mail.ru 		REFERENCIES

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