2021   02   en   p.47-50 V.F. Gremenok1,2, E.P. Zaretskaya1, A.N. Pyatlitski3, N. Akcay4, T.V. Piatlitskaya3, N.N. Musayeva5,
Growth and characterization of ZnO:Eu thin films for solar cell application


Eu doped ZnO thin films were fabricated on silicon substrates by reactive magnetron sputtering. XRD spectra of the doped samples with different Eu-compositions of 0.5, 1 and 2 wt. %, have been analysed. EDX and AES spectroscopy analysis have been used for determination of Eu concentration and the morphology of the annealed samples are observed by SEM. The analysis show that the average crystal grain size of the 0.5 wt.% ZnO:Eu film is larger than those of the ZnO and 1.0 wt.% films, which is consistent with the narrow FWHM of 0.5 wt.% film and widen FWHM of 1.0 wt.% ZnO:Eu film. It is established, that increasing of concentration of Eu leads to lattice mismatch. The more intense red emission related with Eu3+ optical transitions observed for ZnO:Eu films after annealing at 400 ºC.

Keywords: thin films, ZnO:Eu, FWHM, PL spectra.
PACS: 68.35-p, 73.50.Pz, 68.37.Hk, 41.50.+h 51.50.+v


Received: 07.06.2021


1. SSPA “Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus”, 220072, Minsk, P. Brovka Str. 19, Republic of Belarus
2. Belarusian State University of Informatics and Radioelecrtonics, 220013, Minsk, P. Brovka str., 6, Republic of Belarus
3. JSC «INTEGRAL» – «INTEGRAL» Holding Managing Company, 220108, Minsk, Kazintsa I.P. str., 121A, Republic of Belarus
4. Department of Mechanical Engineering, Faculty of Engineering, Baskent University, Ankara, 06790, Turkey
5.Institute of Physics, ANAS, H.Javid ave. 131,AZ1143, Baku, Azerbaijan

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