2021   03   az   p.10-13 E.F. Nasirov,
Physical properties of the p-CdTe/n-CdZnS anisotype heterojunction
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ABSTRACT

The physical properties of the anisotype heterojunction p-CdTe/n-Cd0.5Zn0.5S were investigated, the mechanism of current in the forward and reverse directions, as well as the I–V characteristic were analyzed. It was found that the value of the contact potential difference obtained from the capacitance-voltage characteristic is less than the value obtained from the current-voltage characteristic and is practically independent of frequency. This picture is best explained by the model proposed by Donnelly and Milnes, which takes into account the effect of localized electric charges on the metallurgical boundary of the heteroconductor. The electrical properties of the p-CdTe/n-Cd0.5Zn0.5S structure under study are determined by complex defects, including doubly ionized cadmium vacancies and donor-type additives (V-2Cd - D+)-.

Keywords: Heterojunction, current transfer mechanism, VAX, VFX
PACS: 78.20.-e, 73.00.00

DOI:-

Received: 07.07.2021

AUTHORS & AFFILIATIONS

Baku State University, Institute of Physics Problems, 33 Z. Khalilov st., Baku, Azerbaijan
E-mail: elshannasirov@bsu.edu.az
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