AJP Fizika A
Institute of Physics
Ministry of Science and Education
Republic of Azerbaijan
ISSN 1028-8546
Azerbaijan Journal of Physics
Published from 1995. Registration number: 514, 20 02 1995
Ministry of Press and Information of Azerbaijan Republic
2021 03 az p.10-13 | E.F. Nasirov, Physical properties of the p-CdTe/n-CdZnS anisotype heterojunction |
ABSTRACT The physical properties of the anisotype heterojunction p-CdTe/n-Cd0.5Zn0.5S were investigated, the mechanism of current in the forward and reverse directions, as well as the I–V characteristic were analyzed. It was found that the value of the contact potential difference obtained from the capacitance-voltage characteristic is less than the value obtained from the current-voltage characteristic and is practically independent of frequency. This picture is best explained by the model proposed by Donnelly and Milnes, which takes into account the effect of localized electric charges on the metallurgical boundary of the heteroconductor. The electrical properties of the p-CdTe/n-Cd0.5Zn0.5S structure under study are determined by complex defects, including doubly ionized cadmium vacancies and donor-type additives (V-2Cd - D+)-. Keywords: Heterojunction, current transfer mechanism, VAX, VFX PACS: 78.20.-e, 73.00.00 DOI:- Received: 07.07.2021 AUTHORS & AFFILIATIONS Baku State University, Institute of Physics Problems, 33 Z. Khalilov st., Baku, Azerbaijan E-mail: elshannasirov@bsu.edu.az |
REFERENCIES [1] D. Kuciauskas, A. Kanevce, J.N. Duenow, P.Dippo, M. Young, J.V. Li, D.H. Levi, and T.A. Gessert. Spectrally and time resolved photoluminescence analysis of the CdS/CdTe interface in thin-film photovoltaic solar cells, Appl. Phys. Lett. 102, 2013, 173902. [2] G.L. Burton, D.R. Diercks, O.S. Ogedengbe, P.A.R.D. Jayathilaka, M. Edirisooriya, T.H.Myers, K.N. Zaunbrecher, J. Moseley, T.M. Barnes, B.P. Gorman. Sol. Energy Mat. Sol. Cells., 2018, 182, 68-75. [3] B.E. McCandless, W.A. Buchanan, C.P.Thompson, G. Sriramagiri, R.J. Lovelett, J. Duenow, D. Albin, S. Jensen, E. Colegrove, M. Al-Jassim, and W.K. Metzger. Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping, Sci. Rep. 8, 2018, 14519. [4] G. Kartopu, A.J. Clayton, W.S.M. Brooks, S.D. Hodgson, V. Barrioz, A. Lamb, S.J.C.Irvine, Prog. Photovolt. 22, 2014, 18-23. [5] W.S.M. Brooks, S.J.C. Irvine, V. Barrioz, and A.J. Clayton. Sol. Energy Mat. Sol. Cells, 101, 2012, 26-31. [6] Y.Y. Proskuryakov, K. Durose, J.D. Major, M.K. Al-Turkestani, V. Barrioz, S.J.C. Irvine, E.W. Jones. Sol. Energy Mat. Sol. Cells 93, 2009, 1572-1581. [7] S.L. Rugen-Hankey, A.J. Clayton, V. Barrioz, G. Kartopu, S.J. C. Irvine, J.D. McGettrick, D.Hammond. Sol. Energy Mat. Sol. Cells 136, 2015, 213-217. |