AJP Fizika E

Institute of Physics

Ministry of Science and Education

Republic of Azerbaijan

ISSN 1028-8546

Azerbaijan Journal of Physics

Published from 1995. Registration number: 514, 20 02 1995

Ministry of Press and Information of Azerbaijan Republic

2022 01 en p.18-22 | E.R. Hasanov^{1,2}, Sh.G. Khalilova^{2}, R.K. Mustafayeva^{1}, G.M. Mammadova^{2},Oscillations of current in two-valley semiconductors in a strong electric field |
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ABSTRACTFor the first time, the Boltzmann kinetic equation was used to study current oscillations in two-valley semiconductors of the GaAs type. Taking into account the intravalley and intervalley scattering of charge carriers into the Boltzmann equation does not complicate the solution of this equation. The obtained values of the critical field at which instability begins are in agreement with Gunn's experiment. Keywords: Boltzmann equation, nonequilibrium process, valleys, energy spectrum, energy gap, mean free path, instability. PACS: 78,55, 73.22.CD, 73.22 Received: 10.01.2021 AUTHORS & AFFILIATIONS1. Baku State Uviversity Acad. Z. Khalilov, str.23, Baku, Azerbaijan Republic 2. Institute of Physics, ANAS, AZ-1143, H. Javid 131, Baku, Azerbaijan Republic E-mail: shahlaganbarova@gmail.com |
REFERENCIES[1] E.R. Hasanov, M.F. Novruzov, A.Z. Panahov, A.I. Demirel. International Journal of Pure and Applied Physics. 2008, 4, p. 23-28. [2] E.R. Hasanov, V.M. Hajiyeva, A.S. Rikani, N.M. Tabatabaei. International Journal on “Technnical and Physical problems of engineering”. 2019, vol. 11, № 2, p. 13-14. [3] E.R. Hasanov, F.F. Aliyev, R.K. Mustafayeva. JORS Journal of Applied Physics. Vol.11, Issue 2, SerII (Mar-Apr.2019), pp.33-41. [4] E.R. Hasanov, J.J. Mustafayev. International Journal on “Technnical and Physical problems of engineering”. September 2017, Issue 32, vol. 9, № 3, p. 39-43. [5] E.R. Hasanov, F.F. Aliyev. JORS Journal of Applied Physics. vol. 10, Issue1, VerII (Jan.-Feb.2018), pp. 36-42. [6] H.G. Reik, H. Risken and G. Finger. Theory of Hot-Electron Effects in Many-Valley Semiconductors in the Region of High Electric Field. 1960, Phys.Rev. Lett.v. 5, p. 423. [7] W. Kohn, J.M. Luttinger. Quantum Theory of Electrical Transport Phenomena Phys.Rev. v.108, 1957, p. 590. [8] А.B. Davydov. On the theory of electron motion in gases and semiconductors ZhETP, 1937, т. 7, 1069. [9] B.K. Ridley, T.B. Watkins. The Possibility of Negative Resistance Effects in Semiconductors, Pros.Phys.Soc., 1961, v. 78, p. 293. [10] H.G. Reik, H. Risken. Drift Velocity and Anisotropy of Hot Electrons in n Germanium Phys. Rev., v. 124, p. 777. |