2022   02   en   p.15-20 F.A. Rustamov, N.H. Darvishov, V.E. Bagiev, M.Z. Mamedov, E.Y. Bobrova, H.O. Qafarova,
Red - yellow - red reversible shift of photoluminescence maximum in stain etched porous silicon at dilute HF posttreatment		  pdf 

ABSTRACT

The effect of posttreatment in a diluted HF solution on the photoluminescence spectra of stain etched porous silicon has been investigated. It is shown that this posttreatment of as–prepared samples leads to a shift of the photoluminescence maximum from ~1.85eV to ~2.1eV. For posttreatment times less than 15min, subsequent atmospheric oxidation displaces the photoluminescence maximum again to 1.85eV, exhibiting a full red–yellow–red cycle. For posttreatment times more than 15min, subsequent atmospheric oxidation leads to photoluminescence quenching. The role of oxygen bonds in the observed phenomena is discussed.

Keywords: porous silicon; stain etching; posttreatment; diluted HF; yellow PL; oxygen bonds.
PACS: 81.40.−z; 78.67. Rb; 78.55.−m.

Received: 04.04.2022

AUTHORS & AFFILIATIONS

Condensed Matter Physics Division, Institute for Physical Problems, Baku State University, Baku AZ 1148, Azerbaijan
E-mail: farhad.rustamov@bsu.edu.az 		REFERENCIES

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