Institute of Physics Ministry of Science and Education Republic of Azerbaijan

2022 03 az p.17-20

N.A. Verdiyeva
The formation of defects in crystals of A^IIIB^IIIC₂^VI type and the effect of these defects on the thermal conductivity of crystal TlInSe₂

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ABSTRACT

From literature, the electrical, photoelectric, optical, and dielectric properties of solid crystal crystals, which are layered and chained, depend heavily on the concentration of defects that break the periodicity of the crystal cage and create local changes in the atoms' location. A^IIIB^V, A^IIIB^IIIC₂^VI it is evident from the study of the electrophysical properties of solid crystal crystals that are included in the class of compounds, and the electrical, photoelectric, optical, and dielectric properties of the solid crystal crys-tals of the chain structure are sharply dependent on the concentration and distribution of defects that break the periodicity of the crystal cage and create local changes in the atoms' location. From this point of view, n-InSe and p-GaSe TlIsSe₂ solid crystalline A^IIIB^V, A^IIIB^IIIC₂^VI crystals are more practical in the compound-type compounds. It has been established that when the crystal TlInSe₂ is irradiated with cements, radiation-stimulating processes occur as a result of activation of migration of specific defects.

Keywords: specific defects, macroscopic defects, local levels, recombination centers, additive defects, radiation defects, thermal defects.
PACS: 537.226.4

DOI:-

Received: 14.07.2022

AUTHORS & AFFILIATIONS

Ganja State University, 429 Heydar Aliyev avenue, Ganja city, AZ-2000
E-mail: verdiyeva.nurane@bk.ru

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