AJP Fizika A
Institute of Physics
Ministry of Science and Education
Republic of Azerbaijan
ISSN 1028-8546
Azerbaijan Journal of Physics
Published from 1995. Registration number: 514, 20 02 1995
Ministry of Press and Information of Azerbaijan Republic
2022 03 az p.21-24 | K.H. Khalilova Study of the temperature dependence of the specific electrical conductivity of TlInTe2 and TlInTe2-Te crystals under different irradiation doses |
ABSTRACT The temperature dependence of the anisotropy of the specific electrical conductivity of TlInTe2 and TlInTe2-Te crystals was studied at various irradiation doses (1 ÷ 250 Mrad). It has been determined that the formation of anionic and cationic defects in TlInTe2-Te crystals as a result of the action of γ-rays and the formation of complexes involving additive atoms and cations as a result of their migration increases the anisotropy of conductivity. At high irradiation doses, as a result of the dissociation of complexes, the concentration of point defects increases and the conductivity anisotropy decreases. Keywords: single crystal, anisotropy of electrical conductivity, electrical conductivity, ionic conductivity UOT: 54. 546.683+546.681+546.24 DOI:- Received: 18.07.2022 AUTHORS & AFFILIATIONS Institute of Physics of Azerbaijan National Academy of Sciences, 131 H. Javid ave, Baku, AZ-1143 E-mail: xelilova_kemale79@mail.ru |
REFERENCIES [1] D. Muller, G.Eulenberger, H Hahn. Z. anorg. Allg. Chem., 1973, p. 207-220. [2] В. Алыев, Ш.Г. Гасымов, Т.Г. Мамедов, Т.С. Мамедов, А.И. Наджафов, М.Ю.Сеидов. ФТТ, 2006, 48, 12, с. 2194-2199. [3] W. Granier, P. Bernier, M. Dohri, J. Alizon, H. Robert. J. Phys. Lett., 1981, 42, 13, p. 301. [4] Р.М. Сардарлы, О.А. Самедов, А.И. Наджафов, А.П. Абдуллаев, Э.А. Зейналов, Д.Г. Джаббаров. Изв. НАН Азербайджана. Сер. физ-мат. и техн. Наук, 2005, 5, с.45-50. [5] Ф.Н. Абдуллаев, Т.Г. Керимова, Н.А. Абдуллаев. ФTT, 2005, 47, с 1180-1185. [6] А.И. Наджафов, Г.Г. Гусейнов, О.З. Алекперов, Р.М. Сардарлы, А.П. Абдуллаев, Н.А.Эюбова. Кристаллография, 2008, 53, с.864-868. [7] М.П. Трубицын, М.Д. Волнянский, А.Х.Обайдат. ФТТ, 2008, 50, с. 1184-1187. [8] Е.А. Ермоленко. Технология и конcтруирование в электронной аппаратуре, 2014, с. 3-11. |