2022   04   en   p.03-06 I.I. Abbasov,
Study of impurities-defective luminescence in ZnSe:Cr and ZnSe:Fe in the red and near infrared range


In this work, the impurity-defect luminescence in the red and near-infrared ranges has been studied for ZnSe:Cr+ and ZnSe:Fe+ crystals. Shown, that the mechanism of radiative recombination, which forms emission lines in the spectral range of 0.7-1 μm, is associated with intracenter radiative transitions of the iron and chromium atom, included in the complex defect as Fe2+ and Cr2+.

Keywords: polycrystalline CVD (chemical vapor deposition) ZnSe, iron and chromium impurities, ZnSe:Cr and ZnSe:Fe crystals, high isostatic pressure(HIP).
PACS: 535.37


Received: 11.10.2022


Azerbaijan State Oil and Industry University Azadlig ave., 34, Baku

[1]   V.V. Fedorov, S.B. Mirov, A. Gallian and et al. IEEE J. Quant. Electron. 2006, v.42, pp. 907.
[2]   D.C. Harris. Development of Hot-Pressed and Chemical-Vapor-Deposited Zinc Sulfide and Zinc Selenide in the United States for Optical Windows; Tustison, R.W., Ed.; SPIE: Bellingham,WA, USA., 2007, pp. 654502.
[3]   S.D. Velikanov, V.P. Danilov, N.G. Zakharov. Quantum. electron., 2014, T.44, pp.141.
[4]   S. Mirov, V. Fedorov, D.Martyshkin and et al. IEEE J. Sel. Top. Quant. Electron., 2015, v. 21. pp.1.
[5]   D.V. Martyshkin, D.V. Fedorov, M. Mirov et al. CLEO: 2015, OSA Technical Digest SF1F. 2. 2015.
[6]   S.D.Velikanov, N.A. Zaretskii and E.A. Zotov. Quant. Electron., 2016. T.46. pp.11.
[7]   M.P. Frolov, Yu.V. Korostelin, V.I. Kozlovsky, Y.P. Podmarkov, Y.K. Skasyrsky. Laser Optics (LO), International Conference R1-10., 2016.
[8]   V.I. Kozlovsky, Y.V. Korostelin, Y.P. Podmarkov, Y.K. Skasyrsky, M.P. Frolov. J. Phys. Conf. Ser. 2016, v.740, pp. 012006.
[9]   L.L. Kulyuk and et al. Physica 2010, B 405, 4330.
[10]  M. Surma, M. Godlewska, T. Surkova. Iron and chromium impuritiesin ZnSe as centers of nonradiative recombination. Phys Rev B Condens Matter. 1994, Sep 15, 50(12):8319-8324. doi: 10.1103/physrevb.50.8319.
[11]  I.I. Abbasov, M.A. Musayev, J.I. Huseynov, L.A. Aliyeva, S.Q. Nuriyeva, A.V. Sharifova, R.Sh. Rahimov, J.I. Ismayilov, N.N. Hashimova. Funct. Mater., 2022, 29, 3, pp. 331.
[12]  G.N. Ivanova, V.A. Kasiyan, D.D. Nedeoglo and S.V. Oprya. 32, № 2: 171, 1998, Semiconductors, DOI: 10. 1134/1.1187337 Corpus ID: 97853527