2022   04   az   p.10-13 E.A. Kerimov, S.N. Musayeva,
Cyclic method of deposition of α-Si:H films with intermediate treatment in hydrogen plasma
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ABSTRACT

One way to obtain α-Si:H films with high photosensitivity at relatively low substrate temperatures (about 250°C) is the use of intermittent (cyclic) deposition mode, in which the plasma chemical deposition cycle of α-Si:H film of nanoscale thickness (0,3-25 nm) in monosilane medium alternates with its treatment in hydrogen plasma. Another way to increase the photosensitivity and stability of the layers, as noted earlier, is the method of PCC at relatively high pressures of a gas mixture containing monosilane and hydrogen, α-Si:H films with a small volume fraction of nanocrystalline inclusions.

Keywords: silicon, layer, photosensitivity, nanoscale, amorphous, silane, volume fraction, hydrogen plasma.
PACS: 73.40.Ns, 73.40.Sx, 72.10.-d

DOI:-

Received: 07.10.2022

AUTHORS & AFFILIATIONS

Azerbaijan Technical University, 35 H. Javid pros., Baku, AZ-1073
E-mail: E_Kerimov.fizik@mail.ru
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