ABSTRACT
Models of donor- and acceptor-like states, as well as amphoteric states in the α-Si:H mobility gap, were used to estimate the charge of carriers trapped on states in the
forbidden zone trap. It is assumed that the states at the tail of the conduction band are acceptor-like: they are negative when occupied by an electron and neutral when
free of an electron. The states at the tail of the valence band have donor-like behavior, while the donor- and acceptor-like states at the tails of the zones have an
exponential distribution.
Keywords: solar energy, silicon, charge carriers, traps, donor, acceptor, amphoteric, electron-hole pair.
PACS: 73.40.Ns, 73.40.Sx, 72.10.-d
DOI:-
Received: 17.01.2023
AUTHORS & AFFILIATIONS
Azerbaijan Technical University, 25 H. Javid pros., Baku, AZ-1073
E-mail: E_Kerimov.fizik@mail.ru
Graphics and Images
Fig.1-2
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