2023   02   az   p.02-07 E.A. Kerimov, S.N. Musayeva,
Emission processes in solar elements based on α-Si:H
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ABSTRACT

Models of donor- and acceptor-like states, as well as amphoteric states in the α-Si:H mobility gap, were used to estimate the charge of carriers trapped on states in the forbidden zone trap. It is assumed that the states at the tail of the conduction band are acceptor-like: they are negative when occupied by an electron and neutral when free of an electron. The states at the tail of the valence band have donor-like behavior, while the donor- and acceptor-like states at the tails of the zones have an exponential distribution.

Keywords: solar energy, silicon, charge carriers, traps, donor, acceptor, amphoteric, electron-hole pair.
PACS: 73.40.Ns, 73.40.Sx, 72.10.-d

DOI:-

Received: 17.01.2023

AUTHORS & AFFILIATIONS

Azerbaijan Technical University, 25 H. Javid pros., Baku, AZ-1073
E-mail: E_Kerimov.fizik@mail.ru

Graphics and Images

     

  Fig.1-2

REFERENCIES

[1]   М.С. Нечаев, Д.Ю. Паращук. Квантово-химическое исследование новых редокс-медиаторов на основе комплексов меди и кобальта для фотоэлектрохимических солнечных батарей. Вестник Московского университета. (Серия 3). 2012, № 6, c. 67-70.
[2]   R. Loganathan et al. Journal of Alloys and Compounds, 2014, 616, p. 363-371, (IF 2.726).
[3]   Ю.Д. Арбузов, В.М. Евдокимов. Основы фото-электричества. М.: Изд-во ГНУ ВИЭСХ, 2007. 292 с.
[4]   H. Lindstrom, A. Holmberg, E. Magnusson et al. A New Method for Manufacturing Nanostructured Electrodes on Plastic Substrates. Nano Letters. 2001, 1 (2), p. 97-100.