2023   03   en   p.24-27 G.M. Ahmadova, G.B. Ibragimova,b, M.A. Jafarovb,
Si - Bi2Te3 photoconverter detectors


Bismuth telluride (Bi2Te3) photoconverter detector based on Si single crystal is presented. The photo-reactions of the obtained photodetectors in infrared radiation with wavelengths of 1064 nm and 1550 nm were studied at room temperature. Linear dependences of the photocurrent on both the power of the incident light and the applied voltage were observed. Key device parameters, including photosensitivity and quantum efficiency, were calculated.

Keywords: Bismuth telluride, Thin films, electrochemical deposition, photoconductive detector.
PACS: 71.55Gs, 78.20.-e.


Received: 25.07.2023


a. Institute of Physics, Ministry of Science and Education of the Republic of Azerbaijan, 131, G. Javid Avenue, Baku, AZ 1143, Azerbaijan
b. Baku State University, Baku, Azerbaijan
E-mail: Maarif.Jafarov@mail.ru

Graphics and Images


Fig.1       Fig.2


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