2023   03   en   p.36-38 S.N. Garibova,
Study of local structure Se–As glassy semiconductor system and the mechanism of current passage through the Al-Se95As5<EuF3>-Te structure


The local structure features of Se95As5 chalcogenide glassy semiconductor doped with EuF3 rare-earth impurity and the mechanism of current passage through Al– Se95As5<EuF3>-Te structure have been investigated by the X-ray, Raman micro-spectroscopy methods and current-voltage characteristics. The basic structural elements and chemical bonds formed the amorphous matrix, and the features of current flow in strong electric fields through the Al– Se95As5<EuF3>-Te structure in two directions of the applied electric field have been determined.

Keywords: conductivity, amorphous structure, x-ray diffraction, Raman spectroscopy.
PACS: 61.43.Dq, 72.10.D


Received: 07.09.2023


1. Institute of Physics named after G.M. Abdullayev of Ministry of Science and Education, 131 H. Javid ave., Baku, AZ-1143
2. Khazar University, Department of Physics and Electronics, 41 Mehseti Str., Baku, Az-1096, Azerbaijan

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