ABSTRACT
Highly photosensitive thin films of the Cu3In5S9 compound were obtained by the method of instantaneous thermal evaporation of a substance
in vacuum. Impurity photoconductivity and an impurity absorption band with a maximum at 1,15 eV were detected. It is assumed that the high concentration of impurity
electronic states is due to the presence in the films of a high concentration of cation and anion vacancies in the structure of the crystal lattice.
Keywords: Cu3In5S9, thin film, photoconductivity, absorption, vacancies, defective crystal
PACS: 72.40,+w
DOI:-
Received: 13.10.2023
AUTHORS & AFFILIATIONS
1. Azerbaijan University of Architecture and Construction
2. Baku State University
E-mail: aynurabayramova09@gmail.com
Graphics and Images
Fig.1-2-3
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