Institute of Physics Ministry of Science and Education Republic of Azerbaijan

2024 01 en p.17-22

I.R. Nuriyev¹, A.M. Nazarov¹, M.S. Sadigov¹, S.S. Farzaliyev¹, R.M. Sadigov^1,2,
V.R. Abdulsalamova¹,
Structural, electrical and optical properties of Pb_1-xEu_xTe thin films

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ABSTRACT

Thin films of Pb_1-xEu_xTe solid solution was grown on freshly cleaved (111) surface of BaF₂ by the method of condensation of molecular beams in a vacuum of 10-4 Pa. It was shown that as grown film was (200) oriented single crystal. The type of conductivity depends on the temperature of the additional compensating source Te and at 650 K the type of conductivity changes from n to p. The smoother and uniform surface without any clusters was obtained at the deposition condition υ_c=8÷9 Å/с, T_sub=543÷623 К. By optical measurements have been established that the produced films are direct band gap semiconductor with Eg=0.386 eV, ɑ=104 cm^-1. The energy gap of Pb_1-xEu_xTe (0.386 eV) is larger than that of PbTe (0.320 eV), suggesting that the energy gap can be adjusted by replacing some Te atoms with Eu.

Keywords: thin films, solid solutions, Semiconductor, Pb_1-xEu_xTe, XRD, optical properties.
DOI:10.70784/azip.1.2024117

Received: 29.02.2024
Internet publishing: 27.06.2024

AUTHORS & AFFILIATIONS

1. Institute of Physics, Ministry of Science and Education Republic of Azerbaijan, AZ1143, H. Javid ave., 131, Baku, Azerbaijan
2. Azerbaijan Technical University, Ministry of Science and Education Republic of Azerbaijan, AZ1073, H. Javid ave., 25, Baku, Azerbaijan
E-mail: afinnazarov@yahoo.com

Graphics and Images

Fig.1 Fig.2 Fig.3 Fig.4 Fig.5 Fig.6

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