ABSTRACT
Thin films of Pb1-xEuxTe solid solution was grown on freshly cleaved (111) surface of BaF2 by the method of condensation of molecular beams
in a vacuum of 10-4 Pa. It was shown that as grown film was (200) oriented single crystal. The type of conductivity depends on the temperature of the additional
compensating source Te and at 650 K the type of conductivity changes from n to p. The smoother and uniform surface without any clusters was obtained at the deposition
condition υc=8÷9 Å/с, Tsub=543÷623 К. By optical measurements have been established that the produced films are direct band gap
semiconductor with Eg=0.386 eV, ɑ=104 cm-1. The energy gap of Pb1-xEuxTe (0.386 eV) is larger than that of PbTe (0.320 eV), suggesting that
the energy gap can be adjusted by replacing some Te atoms with Eu.
Keywords: thin films, solid solutions, Semiconductor, Pb1-xEuxTe, XRD, optical properties.
DOI:10.70784/azip.1.2024117
Received: 29.02.2024
Internet publishing: 27.06.2024
AUTHORS & AFFILIATIONS
1. Institute of Physics, Ministry of Science and Education Republic of Azerbaijan, AZ1143, H. Javid ave., 131, Baku, Azerbaijan
2. Azerbaijan Technical University, Ministry of Science and Education Republic of Azerbaijan, AZ1073, H. Javid ave., 25, Baku, Azerbaijan
E-mail: afinnazarov@yahoo.com
Graphics and Images
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