2024   01   az   p.23-28 S.I. Mekhtiyeva1, R.I. Alekberov1, S.M. Mammadov1, H.I. Mammadova1, B.G. Ibragimov1,
M.V. Kazimov1, V.N. Poladova2
Study of volt-ampere characteristics of Al-Ge33As17S35Se15-Te sandwich structure in propane-butane gas mixture		  pdf 

ABSTRACT

In this work, the effect of propane-butane gas mixture on the volt-ampere characteristic (VAC) of thin-layer Al-Ge33As17S35Se15-Te sandwich structure obtained by thermal evaporation in vacuum was studied. It was determined that the oscillations observed in VAC gradually weaken and disappear due to the influence of gas atoms. This result is explained by the accumulation of neutral gas atoms in the lower atomic pores. It has been shown that the neutral gas atoms collected in the pores weaken the processes of thermal-field ionization of U- centers, and the acceleration of the processes of periodic capture of charge carriers by those centers leads to an increase in the resistance of the sample.

Keywords: chalcogenide glass, amorphous
DOI:10.70784/azip.2.2024123

Received: 01.04.2024

AUTHORS & AFFILIATIONS

1. Institute of Physics of the Ministry of Science and Education Republic of Azerbaijan, AZ-1143, Baku, 131. H.Javid ave.
2. Ministry of Science and Education of the Republic of Azerbaijan, Institute of Radiation Problems
E-mail: Rahim-14@mail.ru

Graphics and Images

                   

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 REFERENCIES

[1]   J.M. Lin, M. Heurich, E. Obermeier. Manufacture and examination of various spin-on glass films with respect to their humidity-sensitive properties. Sens. Actuators B, 1993, 13(1-3), p.104-106.
[2]   K.P. Kornev, I.P. Korneva. Humidity detectors based on chalcogenide semiconductors. Journal of Optoelectronics and Advanced Materials, 2005, 7(5), p. 2359–2362.
[3]   D. Tsiulyanu. Chalcogenide based gas sensors/ D. Tsiulyanu, S. Marian, H - D. Liess, I. Eisele. Journal of Optoelectronics and Advanced Materials, 2003, 5(5), p. 1349-1354.
[4]   J.L. Adam, X. Zhang. Chalcogenide Glasses, Preparation, Properties and Applications/ J.L. Adam, X. Zhang, Cambridge: Woodhead Publishing Limited, 2014, 703p.
[5]   R.I. Alekberov, A.I. İsayev, S.I. Mekhtiyeva. Features of the optical absorption, phonon spectrum and glass transition in As-Se, As-Se-S, As-Se-Te chalcogenide semiconductors. Journal of Optoelectronics and Advanced materials, 2020, 22(11), p.596-605.
[6]   S.R. Elliott. Extended range order, interstitial voids and the first sharp diffraction peak of network glasses. J. Non Crystalline Solids, -1995, 182(1), -p.40-48.
[7]   S.R. Elliott. Medium-range structural order in covalent amorphous solids. Nature, 1991, 354, p.445-452.
[8]   P.W. Anderson. Model for the electronics structure of amorphous semiconductors. Phys. Rev. Lett, 1975, 37(15), p.953-955.
[9]   R.A. Street, N. F. Mott. States in the gap in glassy semiconductors. Phys. Rev. Letters, 1975, 35(19), p.1293-1296.
[10]  A.I. Isaev, S.I. Mekhtiyeva, H.I. Mammadova, M.R. Rzayev, R.I. Alekberov. Infulence of topological features and U- - centers on electric charge carrying at strong electric fields in GexAsyTe100-x-y amorphous films. A.I. Isaev, Functional Materials, 2023, № 1, p.28-34.