ABSTRACT
By method of electron difractometry phase formation process in thin films of Cu2Se – Ga2Se – In2Se3 system have been investigated. It has been established that amorphous
layers of ternary compounds of CuGa5(In5)Se8 compositions are stable at room temperature and crystallize in the temperature range 383–393 K.
Keywords: Phase formation, thin film, crystallization
DOI:10.70784/azip.2.2024219
Received: 13.05.2024
Internet publishing: 27.06.2024
AUTHORS & AFFILIATIONS
1. Institute of Physics of the Ministry of Science and Education Republic of Azerbaijan, AZ-1143, Baku, 131. H.Javid ave.
E-mail: amamedova@inbox.ru
Graphics and Images
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REFERENCIES
[1] L. Duran, S.M. Wasim, C.A. Durante Rincon, et al. Phys.stat.sol. V.199, № 2, pp. 220-226, 2003.
[2] C. Rincon, S.M. Wasim, G. Marin, et al. Journ. Appl. Phys., V.90, № 9, p. 4423 – 4428, 2001.
[3] K. Ramanathan, M.A. Conreras, C.L. Perkins, et al. Prog.Photovolt.: Res. Appl., V.11. 225–227, 2003.
[4] А.Ч. Мамедова. Образование наноразмерных аморфных и кристаллических фаз в системах Ag – Ga – S(Se), фазовые превращения в тонких пленках AgGaS2(Se2), дисс. Баку -2010, 150 с.
[5] С.А. Семилетов. ФТТ, т. 3, № 3, с. 746– 753 (1961)
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