CONCENTRATION PROFILES OF COMPONENTS AND IMPURITIES IN Ge1-x-Six<Ga> AND Ge1-x-Six<Sb> CRYSTALS GROWN BY ZONE MELTING METHOD
E.M. Islamzade,
2024   02   en   p.21-25

ABSTRACT

In the Pfann approximation, mathematical calculations were carried out on the distribution of the main components and impurities in germanium-like
Ge(1-x)-Si(x)<Ga> and Ge(1-x)-Si(x)<Sb> crystals, grown by the zone melting method. Using this method, Ge0.9-Si0.2<Ga> and Ge0.9-Si0.2<Sb> crystals were obtained at different lengths of the molten zone and their concentration profile was studied. Comparison of calculated and experimental data indicates their good agreement. This makes it possible to conclude that with the help of mathematical modeling it is possible within wide limits regulate the concentration profile of the main components and impurities in Ge-Si crystals grown by the zone melting method using different length of the molten zone and choosing the composition of the initial polycrystalline rod.

Keywords: semiconductor, Ge-Si, zone melting, Ga, Sb
DOI:10.70784/azip.1.2024221

Received: 24.05.2024
Internet publishing: 28.06.2024

AUTHORS & AFFILIATIONS

Institute of Physics under the Ministry of Education and Science of Azerbaijan Baku, AZ-1143, H. Javid Ave. 133, Azerbaijan
E-mail: islamzadeelnara@gmail.com

Graphics and Images

               

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