2024   02   az   p.31-34 Ch.E. Sabzalieva1, N.N. Abdulzade1, A.M. Khankishieva1, N.N. Mursakulov1,2,
Electrical and photoelectric properties of GaAs/Cu(In1-xGax)(Se1-ySy)2		  pdf 

ABSTRACT

GaAs/Cu(In1-xGax)(Se1-ySy)2 heterojunction were obtained by magnetron sputtering method from two magnetrons shifted towards magnetic systems. In this paper, are given the results of the study of electrical and photoelectric properties of (CIGSS) GaAs/Cu(In1-xGax)(Se1-ySy)2 heterojunctions. To obtain heterojunctions, GaAs substrates with (100) and (111) orientation planes, with n - and p - type conductivity, charge carrier concentration 9·1016 cm-3, obtained by magnetron sputtering method were used. GaAs/Cu(In1-xGax)(Se1-ySy)2 thin films were obtained on glass and polyamide substrates for simultaneous optical measurements, quality control, and determination of thickness and layer composition.

Keywords: Magnetron sputtering, efficient solar cells, heterojunctions.
DOI:10.70784/azip.2.2024231

Received: 22.05.2024
Internet publishing: 27.06.2024

AUTHORS & AFFILIATIONS

1. Institute of Physics named after H.M.Abdullayev of the Ministry of Science and Education Republic of Azerbaijan AZ-1143, Baku, 131.H.Javid ave.
2. Ministry of Science and Education of the Republic of Azerbaijan, Institute of Radiation Research
E-mail: ch.sabzaliyeva@mail.ru

Graphics and Images

                   

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