THE INVESTIGATION OF THE VOLTAGE AND FREQUENCY DEPENDENT ELECTRICAL CHARACTERISTICS OF Re/n-GaAs SCHOTTKY BARRIER DIODE USING I–V, C–V AND G/ω–V MEASUREMENTS
I.M. Afandiyeva1*, S.A. Yerishkin2, E.A. Rasulov1, S.I. Amirova1
2024   03   en   p.37-43

ABSTRACT

The main parameters of Re/n-GaAs Schottky barrier diodes (SBDs) were investigated at room temperature by the forward and reverse bias current–voltage (I–V), capacitance– voltage (C–V) and conductance–voltage (C/ω-V).The diodes were fabricated by using PLD technique. Characteristics parameters such as potential barrier height (ΦB), ideality factor (n) and series resistance (Rs) have been calculated by using different methods and compared. Furthermore, the voltage-dependent profile of the resistance (Ri) and shunt resistance (Rsh) were obtained for Re/n-GaAs Schottky diodes from the I–V data using Ohm's law. In addition, the influence of frequency on parameters have been investigated. From the reverse bias C-2 versus V plots the Fermi energy level EF, doping concentration ND and potential barrier height for each frequency have been obtained. The dependence of parameters on frequency due to surface state have been revealed.

Keywords: Re/n-GaAs Schottky barrier diodes (SBDs); Frequency dependence; Series resistance; Surface states, Impedance spectroscopy;
PACS: 73.30+y, 73.20.At, 73.40.Ns

DOI:-

Received: 01.10.2024
Internet publishing: 11.10.2024

AUTHORS & AFFILIATIONS

1. Baku State University, Baku, AZ1148, Azerbaijan
2. Department of Chemical Engineering, Faculty of Engineering, Gazi University, Ankara, Turkey
*Corresponding author: E-mail: I_afandiyeva@yahoo.com

Graphics and Images

                      

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