STUDY OF THE DEPENDENCE OF THE RADIATION INTENSITY IN THE NEAR INFRARED RANGE OF ZnSe:Cr WITH A CHANGE IN THE POWER OF THE EXCITING SOURCE OF THE Nd:YAG LASER FROM 1 mW TO 10 mW
M.A. Musayev, I.I. Abbasov, E.A. Eminova
2024   04   en   p.33-35

ABSTRACT

The aim of this work is to study the photoluminescence spectra of impurity defects in near infrared radiation for ZnSe:Cr+ crystals with a variable concentration of chromium atoms when changing the power of the excited light from 1 mW to 10 mW. The samples were excited by light with a wavelength of 532 nm (the second harmonic of the Nd:YAG laser), and in the luminescence spectrum, maxima were observed for all samples at a wavelength of 930 nm, but they differed in intensity and half-width.

Keywords: polycrystalline CVD (chemical vapor deposition) ZnSe, impurity-defect luminescence, chromium in zinc selenide, high isostatic pressure(HIP).
DOI:10.70784/azip.1.2024433

Received: 25.11.2024
Internet publishing: 05.12.2024

AUTHORS & AFFILIATIONS

Azerbaijan State Oil and Industry University, AZ 1010, Baku, Azerbaijan
E-mail:

Graphics and Images

    

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