ANALYSIS OF DEPTH PROFILES OF DEFECTS FORMED IN CuInSe2 THIN FILMS AFTER IMPLANTATION WITH
Ar+ IONS
Ch.E. Sabzaliyeva1, N.N. Mursakulov1,2, Kh.M. Guliyeva1, N.N. Abdulzade1
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ABSTRACT

Of particular interest is ion implantation of chalcopyrite semiconductor materials CuInSe2 with high conversion efficiency, used as absorber layers in solar cells. CuInSe2 sample was implanted with 30 keV Ar+ ions at room temperature with an ion current density of 3 μA/cm2 and a radiation dose ranging from 1012 to 3 · 1016 ions/cm-2. After 3 ·1015 cm-2, the total damage is calculated to be 3 ·1016cm-2, suggesting that only 10 out of 525 created defects per implanted Ar ion were left unhealed.

Keywords: ion implantation, chalcopyrite structure, Rutherford backscattering, Gaussian curves.
DOI:10.70784/azip.1.2025113

Received: 13.01.2025
Internet publishing: 03.03.2025    AJP Fizika E 2025 01 en p.13-17

AUTHORS & AFFILIATIONS

1. Institute of Physics of the Ministry of Science and Education, H. Javid ave. 131, AZ-1073, Baku, Azerbaijan
2. Institute of Radiation Problems of the Ministry of Science and Education AZ 1143, B. Vahabzade Ave., 9, Baku, Azerbaijan
E-mail: ch.sabzaliyeva@mail.ru

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