PHOTOINDUCED EFFECTS IN THIN FILMS OF CHALCOGENIDE GLASSY Ga6Sb18S76
S.I. Mekhtiyeva, R.I. Alekberov, I.R. Ismayilov
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ABSTRACT

The article studies the effect of ultraviolet illumination on the optical emission spectrum of a Ga6Sb18S76 chalcogenide glassy thin film. It was found that the increase in the optical bandgap (Eg) at the initial stage of the exposure time (t=0-20 min) is due to the breaking of low-energy Sb-Sb (1.31 eV), Ga-Ga (1.48 eV) bonds under the influence of photo-induction, as well as the formation of new high-energy bonds (Ga-S, Sb-S, Ga-O, Sb-O) due to chemical activity. It is shown that the decrease in Eg at the exposure time of t=20-40 min may be due to the breaking of high energy Ga-S (~2.51 eV) and Sb-S (~2.23 ÷3.59 eV) bonds under the influence of photo-induction. A slight increase in Eg at an exposure time of t=40–90 min is due to the formation of a thin layer of stronger oxide bonds (Ga-O, Sb-O) on the surface as a result of the rupture of highly concentrated heteropolar bonds (Ga-S, Sb-S) and as a result, photo-induced volume expansion occurs.

Keywords: amorphous, glass, phototransparency, photodarkening
DOI:10.70784/azip.2.2025262

Received: 02.06.2025
Internet publishing: 20.06.2025    AJP Fizika A 2025 02 az p.62-65

AUTHORS & AFFILIATIONS

Institute of Physics named after H.M.Abdullayev of the Ministry of Science and Education Republic of Azerbaijan, 131 H.Javid ave. Baku, AZ-1073, Azerbaijan
E-mail: Rahim-14@mail.ru

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