ABSTRACT
The electrical properties of In0.93Sm0.07Se monocrystalline irradiated in the temperature interval 142-294K with Dγ=(50,70,80,90 and 100)
krad were studied. When irradiated with γ-quanta with a dose 50 krad In0.93Sm0.07Se crystals. Electrical conductivity decreases due to compensation of
uncontrolled defect centers. At subsequent high doses of radiation, no additional defect centers are formed, but the concentration of the previous centers increases, which
leads to an increase in electrical conductivity. The activation energy of charge carriers decreases with increasing dose of γ-irradiation. In0.93Sm0.07Se monocrystalline
semiconductors are used for diapazonation.
Keywords: ideal crystal, rare earth elements, compensation, electrical conductivity.
DOI:10.70784/azip.1.2026121
Received: 12.01.2026
Internet publishing: 17.02.2026 AJP Fizika E 2026 1 en p.21-22
AUTHORS & AFFILIATIONS
* Azerbaijan Technical University, Baku-1143, H. Javid Avenue, 25
Institute of Physics of the Ministry of Science and Education of Azerbaijan, Baku-1073, H. Javid Avenue, 131
Graphics and Images
Fig.1
|
[1] A.A. Ismailov, Sh.G.Gasimov, T.S Mamedov, K.R Allahverdiev. The influence of pressure on electrical conductivity and the Hall effect in indium selenide single crystals. FTP, 1992, vol. 26, № 11, pp. 1995-1997.
[2] A.A. Ismayilov, P.H. Ismayilova, A.A. Ismayilov, L.V. Rustamova, M.M. Shirinov, S.S. Abdinbeyov. Electrical conductivity properties of In0.9993Er0.0007Se crystals. AJP FIZIKA, 2025, v.XXXI, № 2, section:A, pp 29-31.
[3] K.R. Allahverdiev, Ş. Ellialtıoglu, Z. Ibragimov, A.A. Ismailov. Raman scattering and Hall effect in layer InSe under pressure. High Рressure, Malayziya, 1994, v.13, p.121-125.
[4] G.I. Isakov, A.A. Ismailov, N.Z. Gasanov, P.G. Ismailova, A.A. Ismailov. Electrophysical properties of In1-xSmxSe crystals at different doses of γ-irradiation. Polish Journal of Science 2024, № 71, pp. 43-49.
[5] A.Z. Abasova, R.S. Madatov, V.I. Stafeev. Radiation-stimulated processes in chalcogenide structures. Baku, Elm, 2010. 349 p.
|