DIELECTRIC RELAXATION AND AC CONDUCTIVITY OF Au/(7% CdTe:PVA)/n-Si MPS STRUCTURES AT LOW FREQUENCIES
I.M. Afandiyeva1, E.R. Bakhtiyarli2, C.G. Akhundov1
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ABSTRACT

In this work, we investigate the electrical and dielectric properties of a Au/7%CdTe-doped:PVA/n-Si hybrid structure by analyzing the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics over a frequency range of 10 kHz and 200 kHz at room temperature. From these measurements, key dielectric parameters such as the real (ε′) and imaginary (ε″) parts of the permittivity, as well as the frequency-dependent AC conductivity (σ¬ac), were extracted within the applied voltage interval of 1.0 V to 1.2 V. The experimental results reveal a clear decrease in ε′ and ε″ with increasing frequency, consistent with interfacial polarization and dielectric relaxation mechanisms typical of heterogeneous polymer–semiconductor systems. Notably, the AC conductivity exhibited a non-monotonic profile with distinct relaxation peaks, suggesting multiple transport mechanisms governed by interface states and CdTe-related trap centers. A representative numerical value of σac reached approximately 5.5x10⁻⁸ S/cm at low frequencies under 1.2 V bias. These findings highlight the strong influence of CdTe doping on the polarization dynamics and field-dependent conduction behavior of the hybrid junction. Full interpretation of the electrical response and conduction mechanisms is provided in the conclusion.

Keywords: CdTe-doped PVA, metal–polymer–semiconductor (MPS) structure, dielectric properties, AC conductivity, interfacial polarization, impedance spectroscopy.
DOI:10.70784/azip.1.2026127

Received: 16.02.2026
Internet publishing: 19.02.2026    AJP Fizika E 2026 1 en p.27-31

AUTHORS & AFFILIATIONS

1. Baku State University, Institute for Physical Problems, Baku, Azerbaijan
2. Baku State University, Department of Physics, Baku, Azerbaijan
E-mail: I_afandiyeva@yahoo.com, elvinb18104@sabah.edu.az

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