ABSTRACT
In this study, we investigate the electrical properties of a Au/7%Ni-doped PVP/n-Si metal–polymer–semiconductor (MPS) structure. The study focuses on the influence of the
Ni-doped interfacial polymer layer on the device’s low-frequency behavior. Electrical characterization was carried out using capacitance–voltage (C–V), conductance over
angular frequency–voltage (G/ω–V), and series resistance–voltage (Rs–V) measurements. All measurements were performed at room temperature (300 K), in the voltage range
from –4.5 V to +3.5 V, using two low-frequency conditions: 100 Hz and 200 Hz. A pronounced frequency-dependent dispersion was observed in both C–V and G/ω–V characteristics,
particularly near +1.2 V, indicating strong interfacial polarization and trap-related effects. The peak capacitance at 100 Hz reached approximately 9.4 × 10⁻¹⁰ F, decreasing
at higher frequency due to the reduced response of surface states. Series resistance, extracted using the Nicollian–Brews method, showed significant variation with both
voltage and frequency, confirming the active role of interfacial traps and dipolar relaxation in the Ni-doped PVP layer. These findings demonstrate that Ni incorporation
substantially modifies the dielectric and resistive properties of the interface, enhancing the sensitivity of the device to frequency-dependent surface state dynamics.
Keywords: Metal–Polymer–Semiconductor (MPS), Ni-doped PVP, Schottky diode, Capacitance–Voltage (C–V), Conductance–Voltage (G/ω–V), impedance spectroscopy, Interface states.
DOI:10.70784/azip.1.2026132
Received: 16.02.2026
Internet publishing: 19.02.2026 AJP Fizika E 2026 1 en p.32-37
AUTHORS & AFFILIATIONS
Baku State University, Department of Physics, Baku,Azerbaijan
E-mail: elvinb18104@sabah.edu.az, I_afandiyeva@yahoo.com
Graphics and Images
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