FABRICATION AND CHARACTERIZATION OF GaSe NANOPARTICLE/Si HETEROSTRUCTURES PREPARED BY PULSED LASER ABLATION IN LIQUID
Vagif Salmanov*A, Rovshan MamedovA, Ali GuseinovA, Guseyn IbragimovB, Fidan AkhmedovaA, Aydan KhaligzadeB, Lamiya Balayeva*, Aytan AliyevaB
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ABSTRACT

GaSe nanoparticles were synthesized using the pulsed laser ablation in liquid (LAL) technique and deposited onto n-type silicon substrates to form GaSe nanoparticle/Si heterostructures. The LAL method enabled the production of high-purity nanoparticles without the use of chemical precursors or surfactants. The structural, morphological, compositional, and vibrational properties of the obtained heterostructures were systematically investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and Raman spectroscopy. XRD analysis revealed the presence of crystalline hexagonal GaSe nanoparticles along with the dominant diffraction peak of the Si substrate. SEM observations showed the formation of nanoparticles with sizes ranging from tens to several hundreds of nanometers distributed across the silicon surface. EDS measurements confirmed the presence of Ga and Se elements, verifying the successful deposition of GaSe nanoparticles. Raman spectroscopy identified characteristic phonon modes of GaSe, including A1g and E2g vibrations, confirming the preservation of the layered crystal structure after laser ablation. The results demonstrate that the pulsed laser ablation in liquid method is an effective approach for the synthesis of GaSe nanoparticles and the fabrication of GaSe nanoparticle/Si heterostructures. The obtained structures show promising potential for future optoelectronic and photodetector applications.

Keywords: Nanoparticles, pulsed laser ablation, X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, Raman spectroscopy, phonon modes, quantum confinement, surface effects.
DOI:10.70784/azip.1.2026145

Received: 24.02.2026
Internet publishing: 11.03.2026    AJP Fizika E 2026 1 en p.45-50

AUTHORS & AFFILIATIONS

a. Department of Semiconductor physics, Baku State University, 23 Academic Zahid Khalilov Street, Baku AZ1148, Azerbaijan.
b. Institute of Physics, Ministry of Science and Education, Baku AZ1073, Azerbaijan
*E-mail: vagif_salmanov@yahoo.com

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