AJP Fizika E
Institute of Physics
Ministry of Science and Education
Republic of Azerbaijan
ISSN 1028-8546
Azerbaijan Journal of Physics
Published from 1995. Registration number: 514, 20 02 1995
Ministry of Press and Information of Azerbaijan Republic
2020 03 en p.46-50 | N.V. Sadigova1, F.I. Ahmadov1,2, A.Z. Sadigov1,2, A.H. Mammadli1, A.H. Gerayeva1, N.N. Heydarov1, Performance of new MAPD photodiodes |
ABSTRACT The article presents the results of the study of optical characteristics and the calculation of the internal gain of a new micropixel avalanche photodiode (MAPD). The calculation procedure is described, the experimental setup of the performed studies, and the results of the study of parameters at low light fluxes, up to single photons, are also presented. It was revealed that avalanche photodiodes with a micropixel structure can be silicon analogs of widely used vacuum photomultiplier tubes. Keywords: Photodiode; MAPD; APD; photodetector. PACS: 85.30.−z; 85.60.Dw Received: 28.10.2020 AUTHORS & AFFILIATIONS 1. Institute of Radiation Problems of ANAS, Baku, Azerbaijan 2. National Nuclear Research Center, Baku, Azerbaijan E-mail: saazik@yandex.ru |
REFERENCIES [1] P. Buzhan at al. 7th International Conference on Advanced Technology and Particle Physics. Como, Italy, 2001. The advanced study of silicon photomultiplier. [2] P. Buzhan at al.: 3rd International Conference on New Developments in Photodetection. Beaune, France, 2002. Silicon Photomultiplier and its possible applications. [3] B. Dolgoshein. Silicon photomultipliers in particle physics: possibilities and limitations. MIPhI, Moskow [4] Z. Sadygov et al. On the prospects of using a new silicon avalanche photodetectors with local negative coupling JINR, LHEP, 2000, (Russian). [5] Chirikov-Zorin et al. Absolute calibration and monitoring of a spectrometric channel using a photomultiplier. Preprint of JINR, Dubna, 1993; Nuclear Instrument & Methods A339(1994)468. |